丝印：GB2；Package：WQFN；LM4923 1.1 Watt Fully Differential Audio Power Amplifier With Shutdown Select

1FEATURES 2• Fully Differential Amplification • Available in Space-saving WQFN Package • Ultra Low Current Shutdown Mode • Can Drive Capacitive Loads up to 100pF • Improved Pop & Click Circuitry Eliminates Noises During Turn-on and Turn-off Transitions • 2.4 - 5.5V Operation • No Output C

文件：572.28 Kbytes 页数：24 Pages

TI

德州仪器

丝印：GB2；Package：WQFN；LM4923 1.1 Watt Fully Differential Audio Power Amplifier With Shutdown Select

1FEATURES 2• Fully Differential Amplification • Available in Space-saving WQFN Package • Ultra Low Current Shutdown Mode • Can Drive Capacitive Loads up to 100pF • Improved Pop & Click Circuitry Eliminates Noises During Turn-on and Turn-off Transitions • 2.4 - 5.5V Operation • No Output C

文件：572.28 Kbytes 页数：24 Pages

TI

德州仪器

丝印：GB2；Package：WQFN；LM4923 1.1 Watt Fully Differential Audio Power Amplifier With Shutdown Select

1FEATURES 2• Fully Differential Amplification • Available in Space-saving WQFN Package • Ultra Low Current Shutdown Mode • Can Drive Capacitive Loads up to 100pF • Improved Pop & Click Circuitry Eliminates Noises During Turn-on and Turn-off Transitions • 2.4 - 5.5V Operation • No Output C

文件：572.28 Kbytes 页数：24 Pages

TI

德州仪器

丝印：GB20NC60V；Package：D2PAK；30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

文件：469.12 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GB20N45LZ；Package：D2PAK；Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ

文件：536.15 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GB20N45LZ；Package：DPAK；Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ

文件：536.15 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 页数：3 Pages

Microsemi

美高森美

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 页数：3 Pages

Microsemi

美高森美

INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 209 A

FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery c

文件：202.59 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 页数：3 Pages

Microsemi

美高森美