丝印：GB7；Package：SOT-23-3；300mA RF ULDO REGULATOR

Features • Up to 300mA Output Current • Excellent ESR Stability • Low Standby Current • Low Dropout Voltage: VDROP = 250mV at 300mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • O

文件：715.83 Kbytes 页数：30 Pages

DIODES

美台半导体

丝印：GB7H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：985.08 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：GB7NC60HD；Package：I2PAK_TO-262；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：GB7NC60HD；Package：D2PAK_TO-263；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：GB7NC60HD；Package：D2PAK；N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER

文件：430.39 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline

文件：179.93 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

文件：330.47 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：174.54 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

文件：152.86 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技