STGB7H60DF中文资料意法半导体数据手册PDF规格书

厂商型号	STGB7H60DF
功能描述	Trench gate field-stop IGBT, H series 600 V, 7 A high speed
丝印标识	GB7H60DF
封装外壳	D2PAK
文件大小	985.08 Kbytes
页面数量	25 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-3 12:00:00
人工找货	STGB7H60DF价格和库存，欢迎联系客服免费人工找货

描述 Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT series offers the optimum

compromise between conduction and switching

losses, maximizing the efficiency of very high

frequency converters. Furthermore, a positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in easier paralleling

operation.

特性 Features

• High speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short-circuit rated

• Ultrafast soft recovery antiparallel diode

Applications

• Motor control

• UPS, PFC