Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior. The built in collector-gate Zener exhibits

a very precise active clamping while the gateemitter Zener supplies an ESD protection.

Features

■ Low threshold voltage

■ Low on-voltage drop

■ Low gate charge

■ High current capability

■ High voltage clamping feature

Applications

■ Automotive ignition

STGB10NB37LZ属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGB10NB37LZ晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。