STGB10HF60KD中文资料意法半导体数据手册PDF规格书

厂商型号	STGB10HF60KD
功能描述	10 A - 600 V - short-circuit rugged IGBT
文件大小	477.41 Kbytes
页面数量	13 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-29 16:42:00
人工找货	STGB10HF60KD价格和库存，欢迎联系客服免费人工找货

Features

■ Low on-voltage drop (VCE(sat))

■ Operating junction temperature up to 175 °C

■ Low Cres / Cies ratio (no cross conduction

susceptibility)

■ Tight parameter distribution

■ Ultrafast soft-recovery antiparallel diode

■ Short-circuit rugged

Applications

■ Motor drives

■ High frequency inverters

■ SMPS and PFC in both hard switch and

resonant topologies

Description

This device utilizes the advanced PowerMESH™

process for the IGBT and the Turbo 2 Ultrafast

high voltage technology for the diode. The

combination results in a very good trade-off

between conduction losses and switching

behavior rendering the product ideal for diverse

high voltage applications operating at high

frequencies.