丝印：GB1；Package：SOT26；SECONDARY SIDE SYNCHRONOUS RECTIFICATION CONTROLLER

文件：429.36 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：GB10H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.73583 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：GB10HF60KD；Package：D2PAK；10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：477.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：GB10HF60KD；Package：D2PAK；10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：477.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：GB10NB37LZ；Package：D2PAK；10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

文件：751.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：GB10NB37LZ；Package：D2PAK；10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

文件：751.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：GB10NC60HD；Package：D2PAK；600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

文件：771.12 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：GB10NC60KD；Package：D2PAK；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件：1.6576 Mbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

丝印：GB15H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.86596 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

丝印：GB18N40LZ；Package：D2PAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

文件：575.8 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体