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STGB10NC60KDT4

丝印:GB10NC60KD;Package:D2PAK;10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件:1.6576 Mbytes 页数:30 Pages

STMICROELECTRONICS

意法半导体

GB10NC60KD

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件:379.54 Kbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

GB10NC60KD

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件:526.13 Kbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    GB10NC60KD

  • 功能描述:

    IGBT 晶体管 N-channel MOSFET

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST/意法
24+
NA
860000
明嘉莱只做原装正品现货
询价
ST(意法半导体)
24+
D2PAK
1612
原厂订货渠道,支持BOM配单一站式服务
询价
ST/意法
21+
NA
12500
只做全新原装公司现货特价
询价
ST/意法
25+
TO-263
32360
ST/意法全新特价STGB10NC60KDT4即刻询购立享优惠#长期有货
询价
STM
15+
原厂原装
9000
进口原装现货假一赔十
询价
ST
23+
TO263
6996
只做原装正品现货
询价
ST/意法
24+
TO-263
550
只做原厂渠道 可追溯货源
询价
STM
21+
1000
TO-263-3 (D2PAK)
询价
TI
22+
VSON-10(3x3)
6700
原装现货
询价
ST/意法半导体
22+
D2PAK-3
6007
原装正品现货 可开增值税发票
询价
更多GB10NC60KD供应商 更新时间2025-9-21 19:10:00