Package：4-DIP 模块；包装：管件 类别：电源 - 板安装 直流转换器 描述：DC DC CONVERTER 3000V 1.5W

XPPOWER

Package：TO-8 形式，4 引线；包装：托盘 类别：RF/IF，射频/中频和 RFID 衰减器 描述：ATTENUATOR

MACOM Technology Solutions

丝印：G30H603；Package：PG-TO220-3；High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

文件：2.10965 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：G30EF5；Package：PG-TO220-3；High speed 5 FAST IGBT in TRENCHSTOP™ 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freel

文件：1.93829 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：G30T100；Package：PG-TO247-3；Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCEsat - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCEsat • Designed f

文件：802.72 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：G30T60；Package：PG-TO247-3；Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterruptible Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distributio

文件：495.77 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G30N60HS；Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：389.58 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G30N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：389.58 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G30H65DFB2；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package

Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • We

文件：650.02 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：G30M65DF2AG；Package：HU3PAK；Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast-recovery antiparallel diode • Exc

文件：1.08111 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体