| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：G30H65DFB2；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package Features •Maximumjunctiontemperature:TJ=175°C •LowVCE(sat)=1.65V(typ.)@IC=30A •Veryfastandsoftrecoveryco-packageddiode •Minimizedtailcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient Applications •We | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：G30H65DFB2；Package：TO-247；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package Features •Maximumjunctiontemperature:TJ=175°C •LowVCE(sat)=1.65V(typ.)@IC=30A •Veryfastandsoftrecoveryco-packageddiode •Minimizedtailcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient Applications •We | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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