丝印：G30H65DFB2；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package

Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • We

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STMICROELECTRONICS

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丝印：G30H65DFB2；Package：TO-247；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package

Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • We

文件：513.539 Kbytes 页数：15 Pages

STMICROELECTRONICS

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