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STGF30M65DF2	文件：731.88 Kbytes Page：16 Pages	Marking：G30M65DF2；Package：TO-220FP；Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
STGHU30M65DF2AG	文件：1.08111 Mbytes Page：16 Pages	Marking：G30M65DF2AG；Package：HU3PAK；Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package Features •AEC-Q101qualified •Maximumjunctiontemperature:TJ=175°C •6μsofminimumshort-circuitwithstandtime •VCE(sat)=1.6V(typ.)@IC=30A •Tightparameterdistribution •Saferparalleling •Lowthermalresistance •Softandveryfast-recoveryantiparalleldiode •Exc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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STGF30M65DF2

文件：731.88 Kbytes

Page：16 Pages

Marking：G30M65DF2；Package：TO-220FP；Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

STGHU30M65DF2AG

文件：1.08111 Mbytes

Page：16 Pages

Marking：G30M65DF2AG；Package：HU3PAK；Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Features •AEC-Q101qualified •Maximumjunctiontemperature:TJ=175°C •6μsofminimumshort-circuitwithstandtime •VCE(sat)=1.6V(typ.)@IC=30A •Tightparameterdistribution •Saferparalleling •Lowthermalresistance •Softandveryfast-recoveryantiparalleldiode •Exc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

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