丝印：G30M65DF2；Package：TO-220FP；Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

文件：731.88 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：G30M65DF2AG；Package：HU3PAK；Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast-recovery antiparallel diode • Exc

文件：1.08111 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：695.31 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体