丝印：G36；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G36N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G36N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：704.31 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G36N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G36N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00984 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G36N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G36N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：704.31 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G36N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G36N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00984 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

Single Inverter Gate

文件：324.32 Kbytes 页数：1 Pages

GMT

致新科技

Single 2-Input Positive OR Gate

文件：140.2 Kbytes 页数：1 Pages

GMT

致新科技

Multipurpose Enclosures

文件：60.88 Kbytes 页数：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Multipurpose Enclosures

文件：60.88 Kbytes 页数：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商