丝印：G36；Package：SMB；60 V, 3 A low drop Schottky rectifier

Features • Negligible switching losses • Low forward voltage drop • Avalanche rated • ECOPACK2 component

文件：287.01 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：G36；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G36N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G36N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：704.31 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G36N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G36N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00984 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G36N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G36N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：704.31 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G36N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G36N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00984 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

Single Inverter Gate

文件：324.32 Kbytes 页数：1 Pages

GMT

致新科技

Single 2-Input Positive OR Gate

文件：140.2 Kbytes 页数：1 Pages

GMT

致新科技

Multipurpose Enclosures

文件：196.95 Kbytes 页数：1 Pages

MULTICOMP

易络盟