丝印：G3K8N15；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET

Description The G3K8N15HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.36 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G3K8N15；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：694.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G3K8N15；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET

Description The G3K8N15HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.36 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G3K8N15；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：694.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体