丝印：G35N02；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：892.4 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G35N02；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G35N02S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：694.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G35N02；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：892.4 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G35N02；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G35N02S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：694.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体