丝印：G30N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.11 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G30N03A；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：994.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G30N03L；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3-L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：728.73 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G30N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.11 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G30N03A；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：994.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G30N03L；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3-L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：728.73 Kbytes 页数：6 Pages

GOFORD

谷峰半导体