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型号	下载订购	功能描述	制造商上传企业	LOGO
G30N03D3-L	文件：728.73 Kbytes Page：6 Pages	丝印：G30N03L；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET Description The G30N03D3-L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：728.73 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G30N03D3-L	文件：300 bytes Page：1 Pages	30V N Channel TRENCH MOSFET	GOFORD 谷峰半导体	GOFORD
G30N03D3	文件：717.11 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：717.11 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G30N03D3A	文件：994.98 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G30N03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：994.98 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多G30N03D3-L供应商更新时间2025-10-7 11:06:00