丝印：G30H65DFB2；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package

Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • We

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STMICROELECTRONICS

意法半导体

Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A • Maximum junction temperature : TJ = 175 °C \n• Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A \n• Very fast and soft recovery co-packaged diode \n• Minimized tail current \n• Tight parameter distribution \n• Low thermal resistance \n• Positive VCE(sat) temperature coefficient;

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意法半导体

Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package

Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • We

文件：513.539 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

TO-263

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上传：深圳市汇创佳电子科技有限公司

TO-263

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上传：深圳市汇创佳电子科技有限公司