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STGB30H65DFB2中文资料Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package数据手册ST规格书
STGB30H65DFB2规格书详情
描述 Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
特性 Features
• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
技术参数
- 制造商编号
：STGB30H65DFB2
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VCES_max(V)
：650
- PTOT_max(W)
：167
- Freewheeling diode
：true
- IC_max(@ Tc=25°C)(A)
：50
- IC_max(@ Tc=100°C)(A)
：30
- IF_max(@ Tc=25°C)(A)
：41
- IF_max(@ Tc=100°C)(A)
：24
- VCE(sat)_typ(V)
：1.65
- VF_typ(V)
：1.8
- Qg_typ(nC)
：90
- Eoff_typ(mJ)
：0.31
- Err_typ(µJ)
：145
- Qrr_typ(nC)
：600
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
18000 |
原装正品 |
询价 | ||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
询价 | ||
ST |
20+ |
TO-263 |
16000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
23+ |
D2PAK |
12500 |
ST系列在售,可接长单 |
询价 | ||
ST |
2 |
只做正品 |
询价 | ||||
ST/意法 |
2023+ |
TO-263 |
1000 |
专注全新正品,优势现货供应 |
询价 | ||
stm |
23+ |
NA |
1386 |
专做原装正品,假一罚百! |
询价 |
