STGB20NB41LZ中文资料20 A、410 V内部钳制IGBT数据手册ST规格书

描述 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

特性 Features

• HIGH VOLTAGE CLAMPING FEATURE
• POLYSILICON GATE VOLTAGE DRIVEN
• LOW ON-VOLTAGE DROP
• LOW THRESHOLD VOLTAGE
• HIGH CURRENT CAPABILITY
• LOW GATE CHARGE

简介

STGB20NB41LZ属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGB20NB41LZ晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。