STGB10NB40LZT4数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, PowerMESH™ with an overall outstanding performance. The built-in collector-gate Zener exhibits a very precise active clamping while the gate-emitter Zener supplies the ESD protection.

特性 Features

• AEC-Q101 qualified
• Low threshold voltage
• Low on-voltage drop
• Low gate charge
• High current capability
• High voltage clamping feature

简介

STGB10NB40LZT4属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGB10NB40LZT4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。