STGB20NB41LZT4数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The built-in collector-gate Zener exhibits a very precise active clamping while the gate-emitter Zener supplies an ESD protection.

特性 Features

• AEC-Q101 qualified
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate driving
• Very low saturation voltage
• High current capability

简介

STGB20NB41LZT4属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGB20NB41LZT4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。