首页>STGB30H60DF>规格书详情
STGB30H60DF中文资料600 V, 30 A high speed trench gate field-stop IGBT数据手册ST规格书
STGB30H60DF规格书详情
描述 Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
特性 Features
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short circuit rated
Ultrafast soft recovery antiparallel diode
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
23+ |
D2PAK |
8000 |
只做原装现货 |
询价 | ||
STMicroelectronics |
2022+ |
D2PAK |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST |
1932+ |
TO-263 |
622 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268823邹小姐 |
询价 | ||
ST/意法半导体 |
24+ |
D2PAK-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
