首页>STGB30H60DLFB>规格书详情
STGB30H60DLFB中文资料Trench gate field-stop IGBT, HB series 600 V, 30 A high speed数据手册ST规格书
STGB30H60DLFB规格书详情
描述 Description
These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new \"HB\" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
特性 Features
• Designed for soft commutation only
• Maximum junction temperature: TJ= 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat)= 1.55 V (typ.) @ IC= 30 A
• Low VFsoft recovery co-packaged diode
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package
技术参数
- 制造商编号
：STGB30H60DLFB
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VCES_max(V)
：600
- PTOT_max(W)
：260
- Freewheeling diode
：true
- IC_max(@ Tc=100°C)(A)
：30
- IC_max(@ Tc=25°C)(A)
：60
- IF_max(@ Tc=100°C)(A)
：30
- IF_max(@ Tc=25°C)(A)
：60
- VCE(sat)_typ(V)
：1.55
- VF_typ(V)
：1.4
- Qg_typ(nC)
：149
- Eoff_typ(mJ)
：0.29
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
D2PAK-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST |
2511 |
D2PAK |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
25+ |
D2PAK |
16900 |
原装，请咨询 |
询价 | ||
ST/意法 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST |
23+ |
D2PAK |
8000 |
只做原装现货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
24+ |
D2PAK-3 |
16900 |
原装现货,实单价优 |
询价 | ||
ST |
22+ |
D2PAK |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法半导体 |
23+ |
D2PAK-3 |
6000 |
我们只做原装正品,支持检测。 |
询价 |
