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STGB30H60DFB数据手册ST中文资料规格书
STGB30H60DFB规格书详情
描述 Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
特性 Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
技术参数
- 制造商编号
:STGB30H60DFB
- 生产厂家
:ST
- Package
:D2PAK
- Grade
:Industrial
- VCES_max(V)
:600
- PTOT_max(W)
:260
- Freewheeling diode
:true
- IC_max(@ Tc=100°C)(A)
:30
- IC_max(@ Tc=25°C)(A)
:60
- IF_max(@ Tc=100°C)(A)
:30
- IF_max(@ Tc=25°C)(A)
:60
- VCE(sat)_typ(V)
:1.55
- VF_typ(V)
:2
- Qg_typ(nC)
:149
- Eon_typ(mJ)
:0.383
- Eoff_typ(mJ)
:0.293
- Err_typ(µJ)
:104
- Qrr_typ(nC)
:384
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-263 |
99920 |
询价 | |||
STMicroelectronics |
2022+ |
D2PAK |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST(意法半导体) |
24+ |
TO2633 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法半导体 |
25 |
D2PAK-3 |
6000 |
原装正品 |
询价 | ||
ST |
1932+ |
TO-263 |
622 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法半导体 |
24+ |
D2PAK-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
21+ |
D2PAK-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
ST/意法半导体 |
21+ |
D2PAK-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |