Trench gate Field-Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.0V@IC=30A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

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ISC

无锡固电

丝印：GB30H60DFB；Package：D2PAK；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency conve

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STMICROELECTRONICS

意法半导体

600 V、30 A高速沟槽栅场截止HB系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A \n• Tight parameter distribution \n• Safe paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• V;

ST

意法半导体

Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency conve

文件：1.74476 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Features  AEC-Q101 qualified  Maximum junction temperature: TJ = 175 °C  Logic level gate drive  High speed switching series  Minimized tail current  VCE(sat) = 1.7 V (typ.) @ IC = 30 A  Low VF soft recovery co-packaged diode  Tight parameters distribution  Safer paralleling  L

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STMICROELECTRONICS

意法半导体

600 V, 30 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.95033 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体