STGB30H60DFB中文资料意法半导体数据手册PDF规格书

厂商型号	STGB30H60DFB
功能描述	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
丝印标识	GB30H60DFB
封装外壳	D2PAK
文件大小	1.75373 Mbytes
页面数量	21 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-29 23:00:00
人工找货	STGB30H60DFB价格和库存，欢迎联系客服免费人工找货

Description

These devices are IGBTs developed using an

advanced proprietary trench gate and field stop

structure. The device is part of the new HB series

of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of any

frequency converter. Furthermore, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.55 V (typ.) @ IC = 30 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High frequency converters