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STGWA30H65DFB2中文资料意法半导体数据手册PDF规格书
STGWA30H65DFB2规格书详情
Features
• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
Applications
• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current
values, as well as in terms of reduced switching energy. A very fast soft recovery
diode is co-packaged in antiparallel with the IGBT. The result is a product specifically
designed to maximize efficiency for a wide range of fast applications.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
23+ |
TO-247 |
907 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST(意法) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
23+ |
TO-247 long leads |
12500 |
ST系列在售,可接长单 |
询价 | ||
STM |
17+ |
TO247 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
22+ |
TO247 Long Leads |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法 |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
22+ |
TO-247 |
3600 |
原厂原装,价格优势!13246658303 |
询价 | ||
ST/意法 |
22+ |
TO-247 |
9000 |
原装正品,支持实单! |
询价 | ||
ST |
21+ |
TO |
9850 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ST(意法) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 |
