STGB30H65DFB2中文资料意法半导体数据手册PDF规格书

厂商型号	STGB30H65DFB2
功能描述	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package
丝印标识	G30H65DFB2
文件大小	650.02 Kbytes
页面数量	17 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-25 22:59:00
人工找货	STGB30H65DFB2价格和库存，欢迎联系客服免费人工找货

Features

• Maximum junction temperature : TJ = 175 °C

• Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

• Very fast and soft recovery co-packaged diode

• Minimized tail current

• Tight parameter distribution

• Low thermal resistance

• Positive VCE(sat) temperature coefficient

Applications

• Welding

• Power factor correction

• UPS

• Solar inverters

• Chargers

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced

proprietary trench gate field-stop structure. The performance of the HB2 series is

optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current

values, as well as in terms of reduced switching energy. A very fast soft recovery

diode is co-packaged in antiparallel with the IGBT. The result is a product specifically

designed to maximize efficiency for a wide range of fast applications.