型号：AZ1117CR2-5.0TRG1；Package：SOT89；LOW DROPOUT LINEAR REGULATOR

文件：839.11 Kbytes 页数：23 Pages

DIODES

美台半导体

型号：G33N03D3；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：834.15 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：G33N03D52；Package：DFN5/6-8LDual；N-Channel Enhancement Mode Power MOSFET

Description The G33N03D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：930.55 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：G33N03S；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G33N03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：923.25 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：G33N03D3；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：834.15 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：G33N03D52；Package：DFN5/6-8LDual；N-Channel Enhancement Mode Power MOSFET

Description The G33N03D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：930.55 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：G33N03S；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G33N03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：923.25 Kbytes 页数：6 Pages

GOFORD

谷峰半导体