分立式IGBT

Infineon's 1000 V, 30 A single TRENCHSTOP™ IGBT3 in a TO247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes • Lowest VCEsatdrop for lower conduction losses\n• Low switching losses\n• Easy parallel switching capability due to positive temperature coefficient in VCEsat\n• Very soft, fast recovery anti-parallel Emitter Controlled Diode\n• High ruggedness, temperature stable behavior\n• Low EMI emissions\n• L;

Infineon

英飞凌

丝印：G30T100；Package：PG-TO247-3；Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCEsat - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCEsat • Designed f

文件：802.72 Kbytes 页数：11 Pages

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1000V 60A 412W TO247-3

Infineon

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Reverse Conducting IGBT with monolithic body diode

文件：370.91 Kbytes 页数：12 Pages

Infineon

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Soft Switching Series

文件：330 Kbytes 页数：12 Pages

Infineon

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HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌