丝印：G30H65DFB2；Package：TO-247；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package

Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • We

文件：513.539 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：G30A；Package：SSOP；8-INPUT POSITIVE-NAND GATES

文件：1.09158 Mbytes 页数：21 Pages

TI

德州仪器

丝印：G30A；Package：SSOP；8-INPUT POSITIVE-NAND GATES

文件：1.09158 Mbytes 页数：21 Pages

TI

德州仪器

丝印：G30M65DF2；Package：TO-220FP；Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

文件：731.88 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

天线

Taoglas

陶格斯

门极关断晶闸管 - 平板型

Littelfuse

力特

门极关断晶闸管 - 平板型

Littelfuse

力特