丝印：g04；Package：SOT753；Inverter

1. General description XC7SET04 is a high-speed Si-gate CMOS devices. It provides an inverting buffer. 2. Features and benefits • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • TTL input levels • ESD protection: • HBM JESD22-A114

文件：198.32 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：G040P02；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G040P02D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：610.37 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G040P02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：596.62 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G040P02T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：907.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P04；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：915.68 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P04；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G040P04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：915.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G048N04；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G048N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：978.33 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G04P10；Package：SOT-223；P-Channel Enhancement Mode Power MOSFET

Description The G04P10HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：622.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040BG；Package：HSMT8；Nch 40V 95A Power MOSFET

Features 1) Low on - resistance 2) High Power small mold Package (HSMT8) 3) Pb-free plating ; RoHS compliant 4) Halogen Free Application Switching

文件：2.79345 Mbytes 页数：13 Pages

ROHM

罗姆

丝印：G040CH；Package：HSMT8；Nch 40V 135A Power MOSFET

Features 1) Low on - resistance 2) High Power small mold Package (HSMT8) 3) Pb-free plating ; RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested Application Switching Motor drives DC/DC converter

文件：2.5615 Mbytes 页数：13 Pages

ROHM

罗姆