丝印：G06P01；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G06P01E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：639.36 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G06P01；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G06P01E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：639.36 Kbytes 页数：6 Pages

GOFORD

谷峰半导体