丝印：G085N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G085N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G085N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G085N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：995.43 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G085N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G085N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G085N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G085N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：995.43 Kbytes 页数：6 Pages

GOFORD

谷峰半导体