1PS79SB30

Marking：G1；Package：SC-79；40 V, 0.2 A Schottky barrier diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina SOD523(SC-79)ultrasmallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Verylowreversecurrent •Guardringp

1PS79SB30-Q

Marking：G1；Package：SC-79；40 V, 0.2 A Schottky barrier diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina SOD523(SC-79)ultrasmallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Verylowreversecurrent •Guardringp

BFS20

Marking：G1；Package：SOT23；NPN medium frequency transistor

FEATURES •IC(max)=25mA •VCEO(max)=20V •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFthickandthin-filmcircuitapplications. DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage.

BFS20

Marking：G1；Package：SOT-23；EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION.

BFS20

Marking：G1；Package：SOT-23；NPN SILICON PLANAR VHF TRANSISTOR

PARTMARKINGDETAIL-G1

BZD27C68P

Marking：G1；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

BZD27C68P

Marking：G1；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

BZT52H-A4V7

Marking：G1；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1,±2andapproximately±5 •Wideworkingvoltagerange:nominal2.

BZT52H-A4V7-Q

Marking：G1；Package：SC-76；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1,±2andapproximately±5 •Wideworkingvoltagerange:nominal2.

EMG1

Marking：G1；Package：SOT-553；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage.