丝印：G100P04；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G100P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：875.24 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G100P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G100P04KA uses advanced trench technology to provid eexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.04519 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G100P04H-HZR；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G100P04KH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：652.48 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G100P04；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G100P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：875.24 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G100P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G100P04KA uses advanced trench technology to provid eexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.04519 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G100P04H-HZR；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G100P04KH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：652.48 Kbytes 页数：6 Pages

GOFORD

谷峰半导体