丝印：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1003A；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：1.30935 Mbytes 页数：7 Pages

PJSEMI

平晶半导体

丝印：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

High density cell design for ultra low Rdson

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDSS RDS(ON)@10V (typ) ID 100V 135mΩ 5A ● High densi

文件：2.73284 Mbytes 页数：5 Pages

YFWDIODE

佑风微