型号：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 页数：6 Pages

YFWDIODE

佑风微电子

型号：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：PJM10H02NSA；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：1.30935 Mbytes 页数：7 Pages

PJSEMI

平晶半导体

型号：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 页数：6 Pages

YFWDIODE

佑风微电子

型号：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：G1003A-SOT23-3L；High density cell design for ultra low Rdson

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDSS RDS(ON)@10V (typ) ID 100V 135mΩ 5A ● High densi

文件：2.73284 Mbytes 页数：5 Pages

YFWDIODE

佑风微电子