MMSZ5226BS

Marking：G1；Package：SOD-323；SOD-323 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage 350mWPowerDissipationOnCeramicPBC Generalpurpose,MediumCurrent IdeallySuitedforAutomatedAssemblyProcesses

PBRN113EK

Marking：G1；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

PDTC123EM

Marking：G1；Package：SOT883；NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC123EM

Marking：G1；Package：DFN1006-3；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inanleadlessultrasmallSOT883(SC-101)Surface- MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA123EM 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Red

PESD3V3S1UL

Marking：G1；Package：SOD882；Unidirectional ESD protection diodes

1.1Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodesinaSOD882leadlessultra smallSurfaceMountedDevice(SMD)plasticpackagedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients. 1.2Featuresandbenefits 1.3Applicatio

PESD3V3S1UL-Q

Marking：G1；Package：SOD882；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodeinaSOD882leadlessultrasmall SurfaceMountedDevice(SMD)plasticpackage,designedtoprotectonesignallinefromthe damagecausedbyESDandothertransients. 2.Featuresandbenefits •UltrasmallSM

PMBT5551

Marking：G1；Package：SOT23；NPN high-voltage transistor

1.Generaldescription NPNhigh-voltagetransistorinaSOT23plasticpackage. 2.Featuresandbenefits •Lowcurrent(max.300mA) •Highvoltage(max.160V) •AEC-Q101qualified 3.Applications •Generalpurpose

PMBT5551-Q

Marking：G1；Package：SOT23；NPN high-voltage transistor

1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Lowcurrent(max.300mA) •Highvoltage(max.160V) •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

PMEG2005EGW-Q

Marking：G1；Package：SOD123；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotectionencapsulatedinsmallSOD123Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Forwardcurrent:IF≤0.5A •Rev

SD12-01FTG

Marking：g1；Package：SOD323；450W Discrete Unidirectional TVS Diode

Description TheUnidirectionalSDseriesisdesignedforuseinelectronicequipmentforlowspeedandDCapplications.Itwillprotectanysensitiveequipmentfromdamageduetoelectrostaticdischarge(ESD)andothertransientevents. TheSDseriescansafelyabsorbrepetitiveESDstrikesat±