2SK1133

Marking：G11；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELMOSFET DESCRIPTION The2SK1133,N-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga 5Vpowersource. The2SK1133hasexcellentswitchingcharacteristicsandis suitableforuseasahigh-speedswitchingdevi

2SK1399

Marking：G12；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFIELDEFFECTTRANSISTOR FORHIGHSPEEDSWITCHING DESCRIPTION The2SK1399isanN-channelverticaltypeMOSFETcanbe drivenby2.5Vpowersupply. The2SK1399isdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliancesinclud

2SK1580

Marking：G13；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELMOSFET DESCRIPTION The2SK1580isanN-channelverticaltypeMOSFETwhich canbedrivenby2.5Vpowersupply. Asthe2SK1580isdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliance includingVCRcamerasandhea

2SK1581

Marking：G14；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELMOSFET DESCRIPTION The2SK1581,N-channelverticaltypeMOSFET,canbe drivenby2.5Vpowersupply. Asthe2SK1581isdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliances includingVCRcamerasandheadphonestere

2SK1582

Marking：G15；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELMOSFET DESCRIPTION The2SK1582,N-channelverticaltypeMOSFET,isa switchingdevicewhichcanbedrivendirectlybytheoutputof ICshavinga5Vpowersource. The2SK1582hasexcellentswitchingcharacteristicsandis suitableforuseasahigh-speedswitchingde

2SK1589

Marking：G17；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1589,N-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga 5Vpowersource. AstheMOSFEThaslowon-stateresistanceandexcellent switchingcharacteristics,itissuitablefor

2SK1590

Marking：G16；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1590,N-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga 5Vpowersource. TheMOSFEThasexcellentswitchingcharacteristicsandis suitableforuseasahigh-speedswitchingd

2SK1591

Marking：G18；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1591,N-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga 5Vpowersource. AstheMOSFEThasexcellentswitchingcharacteristicsand highdraintosourcevoltage,itissuitable

2SK1657

Marking：G19；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1657isanN-channelverticaltypeMOSFETwhich canbedrivenby2.5Vpowersupply. AstheMOSFETislowGateLeakageCurrent,itissuitablefor filtercircuit. FEATURES •DirectlydrivenbyICshavinga3Vpowersupply. •HaslowG

AP2121AK-1.2TRG1

Marking：G1T；Package：SOT-23-5；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features ·LowDropoutVoltageatIOUT=100mA:150mV Typical(Except1.2V,1.3Vand1.5VVersions) ·LowStandbyCurrent:0.1μATypical ·LowQuiescentCurrent:25μATypical ·HighRippleRejection:70dBTypical（f=1kHz） ·OutputCurrent:MoreThan200mA(300mA Limit) ·ExtremelyLowNoise: