BFS20

Marking：G1；Package：SOT23；NPN medium frequency transistor

FEATURES •IC(max)=25mA •VCEO(max)=20V •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFthickandthin-filmcircuitapplications. DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage.

BFS20

Marking：G1*；Package：SOT-23；NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage. FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.20V) •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFapplicationsinthickandthin-filmcircuits.

BFS20

Marking：G1；Package：SOT-23；NPN SILICON PLANAR VHF TRANSISTOR

PARTMARKINGDETAIL-G1

BFS20

NPN SILICON RF TRANSISTOR

NPNSiliconRFTransistor BFS20isanepitaxialNPNsiliconplanarRFtransistorinTO236plasticpackage(23A3DIN41869),intendedforuseinfilmcircuits. ThetransistorBFS20ismarkedNA.Itisalsoavailableuponrequestwithchangedterminalsequence(emitterandbaseterminalint

BFS20

Marking：G1；Package：SOT-23；EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION.

BFS20

Surface mount Si-Epitaxial PlanarTransistors

•Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BFS20

NPN Medium Frequency Transistor

Features •Lowcurrent(max.25mA) •Lowvoltage(max.20V) •Verylowfeedbackcapacitance(typ.350fF).

BFS20

NPN Silicon Epitaxial Planar Transistor

NPNSiliconEpitaxialPlanarTransistor HighfrequencytransistorforIFandVHFapplications

BFS20

Plastic-Encapsulate Transistor

FEATURES HighFequencyApplication. VHFBandAmplifierapplication RoHSCompliantProduct Powerdissipation PCM:0.25W CollectorCurrent ICM:25mA Collector-basevoltage V(BR)CBO:30V Operating&storagejunctiontemperature

BFS20

TRANSISTOR (NPN)

FEATURES •VeryLowFeedbackCapacitance •LowCurrent •LowVoltage APPLICATIONS •IFandVHFApplicationsinThickandThin-FilmCircuits