丝印：G08P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G08P06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：656.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G08P06D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：827.71 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G08P06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：656.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G08P06D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：827.71 Kbytes 页数：6 Pages

GOFORD

谷峰半导体