丝印：G08N02；Package：SOT-223-3L；N-Channel Trench MOSFET

Description The G08N02H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：556.13 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08N02；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G08N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：697.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08N02；Package：SOT-223-3L；N-Channel Trench MOSFET

Description The G08N02H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：556.13 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08N02；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G08N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：697.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体