丝印：G080P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.76 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G080P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：923.56 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.76 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G080P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：923.56 Kbytes 页数：6 Pages

GOFORD

谷峰半导体