DTD133H

Marking：G08；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

XC7SET08GV

Marking：g08；Package：SOT753；2-input AND gate

1.Generaldescription XC7SET08isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputANDfunction. 2.Featuresandbenefits •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •Balancedpropagationdelays •TTLinputlevels •ESDprotection: •HBMJESD22-A1

MIC2006-0.8YML-TR

Marking：G08；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

G080N06K

Marking：G080N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG080N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G080N10M

Marking：G080N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description TheG080N10Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G080N10T

Marking：G080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description TheG080N10Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G080P06M

Marking：G080P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description TheG080P06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G080P06T

Marking：G080P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description TheG080P06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G085C03D32

Marking：G085C03D；Package：DFN3X3-8LDual；N and P Channel Enhancement Mode Power MOSFET

Description TheG085C03D32usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G085N03K

Marking：G085N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG085N03Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters