丝印：G08；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：g08；Package：SOT753；2-input AND gate

1. General description XC7SET08 is a high-speed Si-gate CMOS device. It provides a 2-input AND function. 2. Features and benefits • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • TTL input levels • ESD protection: • HBM JESD22-A1

文件：199.16 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：G08；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

Microchip

微芯科技

丝印：G080N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G080N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.39 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0175 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04223 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.76 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G080P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：923.56 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G085C03D；Package：DFN3X3-8LDual；N and P Channel Enhancement Mode Power MOSFET

Description The G085C03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.11033 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：G085N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G085N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体