G080N10T

Marking：G080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description TheG080N10Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G080N10M

N-ChannelEnhancementModePowerMOSFET

Description TheG080N10Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GT080N10K

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GT080N10KA

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GT080N10M

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GT080N10T

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10Tusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GT080N10TA

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

NTTFS080N10G

MOSFET-Power,SingleN-Channel,8FL100V,72m,16A

Features •WideSOAforLinearModeOperation •LowRDS(on)toMinimizeConductionLosses •HighPeakUISCurrentCapabilityforRuggedness •SmallFootprint(3.3x3.3mm)forCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •