丝印：G040P02；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G040P02D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：610.37 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G040P02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：596.62 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G040P02T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：907.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G040P02D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：610.37 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G040P02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：596.62 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G040P02；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G040P02T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：907.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体