丝印：G05NP10；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：1.16741 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：G05NP10；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：1.16741 Mbytes 页数：10 Pages

GOFORD

谷峰半导体