丝印：G06NP06；Package：SOP-8；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application  Power switch DC/DC converters

文件：1.54581 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：G06NP06D；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description The G06NP06DS2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.22796 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：G06NP06；Package：SOP-8；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application  Power switch DC/DC converters

文件：1.54581 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：G06NP06D；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description The G06NP06DS2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.22796 Mbytes 页数：10 Pages

GOFORD

谷峰半导体