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G06NP06S2

Marking:G06NP06;Package:SOP-8;N and P Channel Enhancement Mode Power MOSFET

Description ThisProductusesadvancedtrenchtechnology MOSFETstoprovideexcellentR DS(ON)andlowgate charge.ThecomplementaryMOSFETsmaybeusedto formalevelshiftedhighsideswitch,andforahostof otherapplications. Application  Powerswitch DC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

G06NP06DS2

Marking:G06NP06D;Package:SOP-8Dual;N and P Channel Enhancement Mode Power MOSFET

Description TheG06NP06DS2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

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