丝印：G05P06；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：831.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G05P06；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G05P06LA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：775.6 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G05P06；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：831.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G05P06；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G05P06LA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：775.6 Kbytes 页数：6 Pages

GOFORD

谷峰半导体