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FGA20N120FTD

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA20N120FTDTU

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N120

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

G20N120

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

HGH20N120A

N-ChannelEnhancementInsulatedGateBipolarTransistor

Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

华汕电子器件汕头华汕电子器件有限公司

HGTG20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

HGTG20N120CN

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

HGTG20N120CND

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N120CND

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

HM20N120AB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM20N120T

H&MNPTIGBTsofferlowerlossesandhigherenergy

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM20N120TB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IHW20N120R

HighSpeed2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IHW20N120R

ReverseConductingIGBTwithmonolithicbodydiode

Features: •PowerfulmonolithicBodyDiodewithverylowforwardvoltage •Bodydiodeclampsnegativevoltages •TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior •NPTtechnologyoffers

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IXDA20N120AS

HighVoltageIGBT

HighVoltageIGBT ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●highswitchingspeed ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●Internationalstandardp

IXYS

IXYS Corporation

IXDH20N120

HighVoltageIGBTwithoptionalDiode

HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientfor easyparalleling ●MOSinpu

IXYS

IXYS Corporation

IXER20N120

NPT3IGBTinISOPLUS247

IXYS

IXYS Corporation

供应商型号品牌批号封装库存备注价格
FAIRCHILD
15+
TO-247
11560
全新原装,现货库存,长期供应
询价
FAIRCHILD
08+(pbfree)
TO-3PN
8866
询价
仙童
23+
TO-247
3000
全新原装
询价
FAIRCHI
21+
TO-3P
12588
原装正品,自己库存 假一罚十
询价
FAIRCHILD/仙童
12+
TO-3P
10
原装正品现货,可开发票,假一赔十
询价
FSC
20+
TO-3PN
36900
原装优势主营型号-可开原型号增税票
询价
FAIRCHI
2020+
TO-3P
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FSC
21+
TO-3P
20
原装现货假一赔十
询价
FSC
22+
TO-3P
32350
原装正品 假一罚十 公司现货
询价
FAIRCHILD/仙童
23+
TO-3PN
10000
公司只做原装正品
询价
更多FGA20N120FD供应商 更新时间2024-9-26 11:03:00