500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V • Low gate charge ( typical 110 nC) • Low Crss ( typical 60 pF) • Fast switching

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FAIRCHILD

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：647.34 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=28.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：362.81 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET

文件：826.32 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，QFET®，500 V，28.4 A，160 mΩ，TO-3P

此类 N 沟道 MOSFET 增强型电场效应晶体管是使用安森美半导体的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率因数校正、基于半桥的电子灯镇流器。 •28.4 A、500 V、RDS(on) = 160 mΩ（最大值）（ VGS = 10 V、ID = 14.2 A）\n•低栅极电荷（典型值 110 nC)\n•低 Crss（典型值 60 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：647.34 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：275.91 Kbytes 页数：2 Pages

ISC

无锡固电